FFM51010

Tunable duplexer front-end module for 4G/5G low band

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Note these are preliminary details and subject to change.

A milestone in RF signal processing advancement, FFM51010 is the only Front-End Module (FEM) that supports all major low bands in the 612-960 MHz range, without the need for integrated or external SAW duplexers.

FFM51010 tunable Front-End Module is based on Forefront RF’s Foretune™ technology. It combines an innovative Electrical Balance n-plexer and Adaptive Passive Cancellation to form a tunable duplexer. The module also contains a multi-mode PA (supporting 4G and 5G), a low-noise amplifier and a bi-directional coupler.

FFM51010 enables significant size reductions while increasing the number of supported bands, drastically simplifying the RF Front-End Architecture.

Applications

4G, 5G and 5G RedCap Mobile Devices and Wearables with a single low band antenna.

Key features

  • Foretune™ tunable duplexer, supporting bands; 5, 8, 12, 13, 14, 17, 18, 19, 20, 26, 28, 71, 85, 105.
  • No external duplexers required.
  • 4G LTE / 5G NR channel bandwidths up to 20 MHz.
  • LGA-Type module of 6.0 × 4.5 × 0.75mm max.
  • Single MIPI RFFE v3.0 interface.
  • Integrated antenna-port bi-directional RF Coupler.
  • Compatible with APT (Average Power Tracking) and ET (Envelope Tracking) to increase system efficiency.

Functional block diagram

Electrical specifications

Absolute maximum ratings

Parameter Conditions Rating
Storage Temperature -40 to +150°C
Operating Temperature Functional, no damage -30 to +110°C
Supply Voltage, VBATT -0.5 to +6.0 V
Supply Voltage, VIO -0.5 to +2.0 V
Supply Voltage, VDD -0.5 to +2.0 V
Supply Voltage, VCC1 -0.5 to +6.0 V
Supply Voltage, VCC2 -0.5 to +6.0 V
Supply Voltage, VDD_LNA -0.5 to +2.0 V
RF Input Power CW, 50 Ω, Tamb = 25°C +10 dBm

Recommended operating conditions

Parameter Min Typ Max Unit
Operating Frequency Range 612 960 MHz
Operating Temperature -20 +25 +85 °C
Supply Voltage, VBATT +3.0 +3.8 +4.8 V
Supply Voltage, VIO +1.65 +1.8 +1.95 V
Supply Voltage, VDD +1.65 +1.8 +1.95 V
Supply Voltage, VCC1 +0.5 +3.4 +4.6 V
Supply Voltage, VCC2 +0.5 +3.4 +4.6 V
Supply Voltage, VDD_LNA +1.65 +1.8 +1.95 V
Antenna Pin VSWR 2:1 3:1

4G LTE and 5G NR Module characteristics: band 71

Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.

Parameter Conditions Min Typ Max Unit
Tx/Rx Parameters
Channel Bandwidth Configurable ChBW 5, 10, 15, 20 MHz
Duplex Spacing Tx to Rx band -46 MHz
Tx noise and distortion in Rx Channel at Rx Pin P0 = P0 _max-1dB, LTE, 5MHz, 25RB -172 dBm/Hz
Tx Signal Leakage at Rx Pin P0 = P0 _max, LTE, 10MHz, 12 RB -19 dBm
Tx Parameters
Operating Frequency Transmit band 663 698 MHz
Tx Maximum Output Power (P0 _max) P0 _max, 10MHz, 25RB (5G), 12RB (LTE) 24.5 dBm
Tx Gain P0 = P0 _max 27 dB
FEM Tx Efficiency referred to VBATT P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% 16.5 %
Adjacent Channel Leakage Power Ratio NR ACLR -39 -33 dBc
EUTRA ACLR -39 -33 dBc
UTRA ACLR1 -42 -36 dBc
UTRA ACLR2 -45 -39 dBc
Tx EVM DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB 2 3 % rms
Distortion in Downlink Band P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz -52 -50 dBm/MHz
Tx Harmonics 2fo @ P0 _max
1RB, 10MHz		 -47 -40 dBm
3fo @ P0 _max
1RB, 10MHz		 -60 -50 dBm
Rx Parameters
Operating Frequency Receive band 617 652 MHz
Rx Noise Figure Ref to Antenna Pin, average in ChBW, PA off 5 dB
Rx Gain Antenna Pin to Rx Pin, average in ChBW 10.5 dB
Rx Passband Ripple Across ChBW TBD
Rx IMD3 at Rx Pin P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) -94 -83 dBm/MHz

4G LTE and 5G NR Module characteristics: band 28

Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.

Parameter Conditions Min Typ Max Unit
Tx/Rx Parameters
Channel Bandwidth Configurable ChBW 3, 5, 10, 15, 20 MHz
Duplex Spacing Tx to Rx band 55 MHz
Distortion in Downlink Band P0 = P0 _max-1dB, LTE, 5MHz, 25RB -168 dBm/Hz
Tx Signal Leakage at Rx Pin P0 = P0 _max, LTE, 10MHz, 12 RB -17 dBm
Tx Parameters
Operating Frequency Transmit band 703 748 MHz
Tx Maximum Output Power (P0 _max) P0 _max, 10MHz, 25RB (5G), 12RB (LTE) 24.5 dBm
Tx Gain P0 = P0 _max 27 dB
FEM Tx Efficiency referred to VBATT P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% 16.5 %
Adjacent Channel Leakage Power Ratio NR ACLR -39 -33 dBc
EUTRA ACLR -39 -33 dBc
UTRA ACLR1 -42 -36 dBc
UTRA ACLR2 -45 -39 dBc
Tx EVM DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB 2 3 % rms
Distortion in Downlink Band P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz -61 -50 dBm/MHz
Tx Harmonics 2fo @ P0 _max
1RB, 10MHz		 -45 -40 dBm
3fo @ P0 _max
1RB, 10MHz		 -57 -50 dBm
Rx Parameters
Operating Frequency Receive band 758 803 MHz
Rx Noise Figure Ref to Antenna Pin, average in ChBW, PA off 5 dB
Rx Gain Antenna Pin to Rx Pin, average in ChBW 14.5 dB
Rx Passband Ripple Across ChBW TBD
Rx IMD3 at Rx Pin P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) -91 -84 dBm/MHz

4G LTE and 5G NR Module characteristics: band 8

Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.

Parameter Conditions Min Typ Max Unit
Tx/Rx Parameters
Channel Bandwidth Configurable ChBW 1.4, 3, 5, 10, 15, 20 MHz
Duplex Spacing Tx to Rx band 45 MHz
Tx noise and distortion in Rx Channel at Rx Pin P0 = P0 _max-1dB, LTE, 5MHz, 25RB -168 dBm/Hz
Tx Signal Leakage at Rx Pin P0 = P0 _max, LTE, 10MHz, 12 RB -15 dBm
Tx Parameters
Operating Frequency Transmit band 880 915 MHz
Tx Maximum Output Power (P0 _max) P0 _max, 10MHz, 25RB (5G), 12RB (LTE) 24.5 dBm
Tx Gain P0 = P0 _max 27 dB
FEM Tx Efficiency referred to VBATT P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% 16.5 %
Adjacent Channel Leakage Power Ratio NR ACLR -39 -33 dBc
EUTRA ACLR -39 -33 dBc
UTRA ACLR1 -42 -36 dBc
UTRA ACLR2 -45 -39 dBc
Tx EVM DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB 2 3 % rms
Tx noise & distortion in Rx Band at Antenna Pin P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz -52 -50 dBm/MHz
Tx Harmonics 2fo @ P0 _max
1RB, 10MHz		 -45 -40 dBm
3fo @ P0 _max
1RB, 10MHz		 -57 -50 dBm
Rx Parameters
Operating Frequency Receive band 925 960 MHz
Rx Noise Figure Ref to Antenna Pin, average in ChBW, PA off 5 dB
Rx Gain Antenna Pin to Rx Pin, average in ChBW 12 dB
Rx Passband Ripple Across ChBW TBD
Rx IMD3 at Rx Pin P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) -91 -83 dBm/MHz

Antenna Pin coupler / RF Switch characteristics

Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V.

Parameter Conditions Min Typ Max Unit
Antenna Pin coupler frequency range Forward and reverse 612 960 MHz
Antenna Pin coupler coupling factorat CPL_OUT Forward and reverse 28 dB
Antenna Pin coupler directivity at CPL_OUT Forward 20 dB
Reverse 17 dB
Coupler bypass frequency range CPL_IN to CPL_OUT 612 2700 MHz
Coupler bypass loss CPL_IN to CPL_OUT 1.5 dB

Module pin configuration

Pin Number Label Description
2 VDD Supply voltage for module
4 RX_OUT Rx RF output for LNA, internally matched to 50Ω
6 CPL_OUT Coupler output pin
8 CPL_IN Coupler input pin
11 ANT Antenna pin for module, internally matched to 50Ω
15 CPL_TERM Coupler external termination pin
17 VCC2 Supply voltage for second stage of PA
21 TX_IN Tx RF input for PA, internally matched to 50Ω
23 VCC1 Supply voltage for first stage of PA
24 VBATT Supply voltage for PA bias control circuit
26 VDD_LNA Supply voltage for LNA bias control circuit
30 BAL Tuneable Duplexer pin to Balancer circuit
31 BAL_IN Balancer circuit input pin
33 BAL_TERM Balancer circuit external termination pin
36 SDATA MIPI data
37 SCLK MIPI clock
38 VIO MIPI voltage reference (for digital IO)
Ground pins GND These pins must be grounded: 1, 3, 5, 7, 9, 10, 12, 13, 14, 16, 18, 19, 20, 22, 25, 27, 28, 29, 32, 34, 35.
Module Center Ground pads GND Module Center Ground pads must be connected to ground for RF grounding and thermal paths. Module GND pads should be connected to the PCB ground plane through vias under the module to keep connection length as short as possible.

Package dimensions

Pin ID Position X Position Y Dim_X Dim_y
1 -2.65 1.90 0.400 0.400
2 -2.65 1.32 0.400 0.220
3 -2.65 0.88 0.400 0.220
4 -2.65 0.44 0.400 0.220
5 -2.65 0.00 0.400 0.220
6 -2.65 -0.44 0.400 0.220
7 -2.65 -0.88 0.400 0.220
8 -2.65 -1.32 0.400 0.220
9 -2.65 -1.90 0.400 0.400
10 -1.98 -1.90 0.220 0.400
11 -1.54 -1.90 0.220 0.400
12 -1.10 -1.90 0.220 0.400
13 -0.66 -1.90 0.220 0.400
14 -0.22 -1.90 0.220 0.400
15 0.22 -1.90 0.220 0.400
16 0.66 -1.90 0.220 0.400
17 1.10 -1.90 0.220 0.400
18 1.54 -1.90 0.220 0.400
19 1.98 -1.90 0.220 0.400
Pin ID Position X Position Y Dim_X Dim_y
20 2.65 -1.90 0.400 0.400
21 2.65 -1.32 0.400 0.220
22 2.65 -0.88 0.400 0.220
23 2.65 -0.44 0.400 0.220
24 2.65 0.00 0.400 0.220
25 2.65 0.44 0.400 0.220
26 2.65 0.88 0.400 0.220
27 2.65 1.32 0.400 0.220
28 2.65 1.90 0.400 0.400
29 1.98 1.90 0.220 0.400
30 1.54 1.90 0.220 0.400
31 1.10 1.90 0.220 0.400
32 0.660 1.900 0.220 0.400
33 0.220 1.900 0.220 0.400
34 -0.220 1.900 0.220 0.400
35 -0.660 1.900 0.220 0.400
36 -1.100 1.900 0.220 0.400
37 -1.540 1.900 0.220 0.400
38 -1.980 1.900 0.220 0.400

Product handling and soldering

Handling precautions and ESD ratings

Parameter Rating Standard
ESD – Human Body Model Class 1C (1kV) ESDA/JEDEC JS-001-2023
ESD – Charged Device Model Class C2a (500V) ESDA/JEDEC JS-002-2022
MSL–Moisture Sensitivity Level MSL3 IPC/JEDEC J-STD-020

Solderability

Compatible with lead-free (260°C max. reflow temperature) soldering process.

RoHS compliance

This part is compliant with the 2011/65/EU RoHS directive.

Glossary

Acronym Description
3GPP Standards Body – 3rd Generation Partnership Project
5G NR 5th Generation New Radio
5G RedCap 3GPP 5G Reduced Capability
ACLR Adjacent Channel Leakage Ratio
APT Average Power Tracking
ChBW Channel Bandwidth
CW Continuous Wave
ESD Electrostatic Discharge
ET Envelope Tracking
EUTRA Evolved UTRA (3GPP 4G)
EVM Error Vector Magnitude
FEM Front-End Module
HPM High Power Mode
IMD3 3rd Order Intermodulation Distortion
LGA Land Grid Array
LNA Low Noise Amplifier
LPM Low Power Mode
LTE Long Term Evolution (3GPP 4G)
MIPI Mobile Industry Processor Interface
MSL Moisture Sensitivity Level
PCB Printed Circuit Board
PMIC Power Management Integrated Circuit
QPSK Quadrature Phase Shift Keying Modulation
RF Radio Frequency
RFFE Radio Frequency Front End
RoHS Restriction of Hazardous Substances directive
RB Resource Block
Rx Receive
Tamb Ambient Temperature
Tx Transmit
UTRA Universal Terrestrial Radio Access (3GPP 3G)
VSWR Voltage Standing Wave Ratio

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