Applications | Key features | Block diagram | Specifications | Configuration | Glossary
FFM51010
Tunable duplexer front-end module for 4G/5G low band
Note these are preliminary details and subject to change.
A milestone in RF signal processing advancement, FFM51010 is the only Front-End Module (FEM) that supports all major low bands in the 612-960 MHz range, without the need for integrated or external SAW duplexers.
FFM51010 tunable Front-End Module is based on Forefront RF’s Foretune™ technology. It combines an innovative Electrical Balance n-plexer and Adaptive Passive Cancellation to form a tunable duplexer. The module also contains a multi-mode PA (supporting 4G and 5G), a low-noise amplifier and a bi-directional coupler.
FFM51010 enables significant size reductions while increasing the number of supported bands, drastically simplifying the RF Front-End Architecture.
Applications
4G, 5G and 5G RedCap Mobile Devices and Wearables with a single low band antenna.
Key features
- Foretune™ tunable duplexer, supporting bands; 5, 8, 12, 13, 14, 17, 18, 19, 20, 26, 28, 71, 85, 105.
- No external duplexers required.
- 4G LTE / 5G NR channel bandwidths up to 20 MHz.
- LGA-Type module of 6.0 × 4.5 × 0.75mm max.
- Single MIPI RFFE v3.0 interface.
- Integrated antenna-port bi-directional RF Coupler.
- Compatible with APT (Average Power Tracking) and ET (Envelope Tracking) to increase system efficiency.
Functional block diagram
Electrical specifications
Absolute maximum ratings
| Parameter | Conditions | Rating |
|---|---|---|
| Storage Temperature | -40 to +150°C | |
| Operating Temperature | Functional, no damage | -30 to +110°C |
| Supply Voltage, VBATT | -0.5 to +6.0 V | |
| Supply Voltage, VIO | -0.5 to +2.0 V | |
| Supply Voltage, VDD | -0.5 to +2.0 V | |
| Supply Voltage, VCC1 | -0.5 to +6.0 V | |
| Supply Voltage, VCC2 | -0.5 to +6.0 V | |
| Supply Voltage, VDD_LNA | -0.5 to +2.0 V | |
| RF Input Power | CW, 50 Ω, Tamb = 25°C | +10 dBm |
Recommended operating conditions
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Operating Frequency Range | 612 | 960 | MHz | |
| Operating Temperature | -20 | +25 | +85 | °C |
| Supply Voltage, VBATT | +3.0 | +3.8 | +4.8 | V |
| Supply Voltage, VIO | +1.65 | +1.8 | +1.95 | V |
| Supply Voltage, VDD | +1.65 | +1.8 | +1.95 | V |
| Supply Voltage, VCC1 | +0.5 | +3.4 | +4.6 | V |
| Supply Voltage, VCC2 | +0.5 | +3.4 | +4.6 | V |
| Supply Voltage, VDD_LNA | +1.65 | +1.8 | +1.95 | V |
| Antenna Pin VSWR | 2:1 | 3:1 |
4G LTE and 5G NR Module characteristics: band 71
Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Tx/Rx Parameters | |||||
| Channel Bandwidth | Configurable ChBW | 5, 10, 15, 20 | MHz | ||
| Duplex Spacing | Tx to Rx band | -46 | MHz | ||
| Tx noise and distortion in Rx Channel at Rx Pin | P0 = P0 _max-1dB, LTE, 5MHz, 25RB | -172 | dBm/Hz | ||
| Tx Signal Leakage at Rx Pin | P0 = P0 _max, LTE, 10MHz, 12 RB | -19 | dBm | ||
| Tx Parameters | |||||
| Operating Frequency | Transmit band | 663 | 698 | MHz | |
| Tx Maximum Output Power (P0 _max) | P0 _max, 10MHz, 25RB (5G), 12RB (LTE) | 24.5 | dBm | ||
| Tx Gain | P0 = P0 _max | 27 | dB | ||
| FEM Tx Efficiency referred to VBATT | P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% | 16.5 | % | ||
| Adjacent Channel Leakage Power Ratio | NR ACLR | -39 | -33 | dBc | |
| EUTRA ACLR | -39 | -33 | dBc | ||
| UTRA ACLR1 | -42 | -36 | dBc | ||
| UTRA ACLR2 | -45 | -39 | dBc | ||
| Tx EVM | DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB | 2 | 3 | % rms | |
| Distortion in Downlink Band | P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz | -52 | -50 | dBm/MHz | |
| Tx Harmonics | 2fo @ P0 _max 1RB, 10MHz |
-47 | -40 | dBm | |
| 3fo @ P0 _max 1RB, 10MHz |
-60 | -50 | dBm | ||
| Rx Parameters | |||||
| Operating Frequency | Receive band | 617 | 652 | MHz | |
| Rx Noise Figure | Ref to Antenna Pin, average in ChBW, PA off | 5 | dB | ||
| Rx Gain | Antenna Pin to Rx Pin, average in ChBW | 10.5 | dB | ||
| Rx Passband Ripple | Across ChBW | TBD | |||
| Rx IMD3 at Rx Pin | P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) | -94 | -83 | dBm/MHz |
4G LTE and 5G NR Module characteristics: band 28
Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Tx/Rx Parameters | |||||
| Channel Bandwidth | Configurable ChBW | 3, 5, 10, 15, 20 | MHz | ||
| Duplex Spacing | Tx to Rx band | 55 | MHz | ||
| Distortion in Downlink Band | P0 = P0 _max-1dB, LTE, 5MHz, 25RB | -168 | dBm/Hz | ||
| Tx Signal Leakage at Rx Pin | P0 = P0 _max, LTE, 10MHz, 12 RB | -17 | dBm | ||
| Tx Parameters | |||||
| Operating Frequency | Transmit band | 703 | 748 | MHz | |
| Tx Maximum Output Power (P0 _max) | P0 _max, 10MHz, 25RB (5G), 12RB (LTE) | 24.5 | dBm | ||
| Tx Gain | P0 = P0 _max | 27 | dB | ||
| FEM Tx Efficiency referred to VBATT | P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% | 16.5 | % | ||
| Adjacent Channel Leakage Power Ratio | NR ACLR | -39 | -33 | dBc | |
| EUTRA ACLR | -39 | -33 | dBc | ||
| UTRA ACLR1 | -42 | -36 | dBc | ||
| UTRA ACLR2 | -45 | -39 | dBc | ||
| Tx EVM | DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB | 2 | 3 | % rms | |
| Distortion in Downlink Band | P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz | -61 | -50 | dBm/MHz | |
| Tx Harmonics | 2fo @ P0 _max 1RB, 10MHz |
-45 | -40 | dBm | |
| 3fo @ P0 _max 1RB, 10MHz |
-57 | -50 | dBm | ||
| Rx Parameters | |||||
| Operating Frequency | Receive band | 758 | 803 | MHz | |
| Rx Noise Figure | Ref to Antenna Pin, average in ChBW, PA off | 5 | dB | ||
| Rx Gain | Antenna Pin to Rx Pin, average in ChBW | 14.5 | dB | ||
| Rx Passband Ripple | Across ChBW | TBD | |||
| Rx IMD3 at Rx Pin | P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) | -91 | -84 | dBm/MHz |
4G LTE and 5G NR Module characteristics: band 8
Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V, VCC1,2 = 3.4V, VDD_LNA = 1.8V, QPSK 10MHz, P0 = P0 _max, PA High Power Mode, LNA max gain.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Tx/Rx Parameters | |||||
| Channel Bandwidth | Configurable ChBW | 1.4, 3, 5, 10, 15, 20 | MHz | ||
| Duplex Spacing | Tx to Rx band | 45 | MHz | ||
| Tx noise and distortion in Rx Channel at Rx Pin | P0 = P0 _max-1dB, LTE, 5MHz, 25RB | -168 | dBm/Hz | ||
| Tx Signal Leakage at Rx Pin | P0 = P0 _max, LTE, 10MHz, 12 RB | -15 | dBm | ||
| Tx Parameters | |||||
| Operating Frequency | Transmit band | 880 | 915 | MHz | |
| Tx Maximum Output Power (P0 _max) | P0 _max, 10MHz, 25RB (5G), 12RB (LTE) | 24.5 | dBm | ||
| Tx Gain | P0 = P0 _max | 27 | dB | ||
| FEM Tx Efficiency referred to VBATT | P0 = P0 _max, LTE, 10MHz, 12RB, VCC and ICC opt, PMIC eff 95% | 16.5 | % | ||
| Adjacent Channel Leakage Power Ratio | NR ACLR | -39 | -33 | dBc | |
| EUTRA ACLR | -39 | -33 | dBc | ||
| UTRA ACLR1 | -42 | -36 | dBc | ||
| UTRA ACLR2 | -45 | -39 | dBc | ||
| Tx EVM | DFT-s-OFDM, 20MHz, 106RB, 256QAM, P0 = P0 _max-4.5dB | 2 | 3 | % rms | |
| Tx noise & distortion in Rx Band at Antenna Pin | P0 = P0 _max-3dB, 5GNR, 106RB, 20MHz | -52 | -50 | dBm/MHz | |
| Tx Harmonics | 2fo @ P0 _max 1RB, 10MHz |
-45 | -40 | dBm | |
| 3fo @ P0 _max 1RB, 10MHz |
-57 | -50 | dBm | ||
| Rx Parameters | |||||
| Operating Frequency | Receive band | 925 | 960 | MHz | |
| Rx Noise Figure | Ref to Antenna Pin, average in ChBW, PA off | 5 | dB | ||
| Rx Gain | Antenna Pin to Rx Pin, average in ChBW | 12 | dB | ||
| Rx Passband Ripple | Across ChBW | TBD | |||
| Rx IMD3 at Rx Pin | P0 = P0 _max-4dB, 1RB, 5MHz, CWblocker -15dBm (2*f_tx-f_rx) | -91 | -83 | dBm/MHz |
Antenna Pin coupler / RF Switch characteristics
Unless otherwise stated, typical test conditions: input and output pins = 50 Ω, all unused RF pins terminated in 50Ω, Tamb = 25°C, VBATT = 3.8V, VDD=1.8V.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Antenna Pin coupler frequency range | Forward and reverse | 612 | 960 | MHz | |
| Antenna Pin coupler coupling factorat CPL_OUT | Forward and reverse | 28 | dB | ||
| Antenna Pin coupler directivity at CPL_OUT | Forward | 20 | dB | ||
| Reverse | 17 | dB | |||
| Coupler bypass frequency range | CPL_IN to CPL_OUT | 612 | 2700 | MHz | |
| Coupler bypass loss | CPL_IN to CPL_OUT | 1.5 | dB |
Module pin configuration
| Pin Number | Label | Description |
|---|---|---|
| 2 | VDD | Supply voltage for module |
| 4 | RX_OUT | Rx RF output for LNA, internally matched to 50Ω |
| 6 | CPL_OUT | Coupler output pin |
| 8 | CPL_IN | Coupler input pin |
| 11 | ANT | Antenna pin for module, internally matched to 50Ω |
| 15 | CPL_TERM | Coupler external termination pin |
| 17 | VCC2 | Supply voltage for second stage of PA |
| 21 | TX_IN | Tx RF input for PA, internally matched to 50Ω |
| 23 | VCC1 | Supply voltage for first stage of PA |
| 24 | VBATT | Supply voltage for PA bias control circuit |
| 26 | VDD_LNA | Supply voltage for LNA bias control circuit |
| 30 | BAL | Tuneable Duplexer pin to Balancer circuit |
| 31 | BAL_IN | Balancer circuit input pin |
| 33 | BAL_TERM | Balancer circuit external termination pin |
| 36 | SDATA | MIPI data |
| 37 | SCLK | MIPI clock |
| 38 | VIO | MIPI voltage reference (for digital IO) |
| Ground pins | GND | These pins must be grounded: 1, 3, 5, 7, 9, 10, 12, 13, 14, 16, 18, 19, 20, 22, 25, 27, 28, 29, 32, 34, 35. |
| Module Center Ground pads | GND | Module Center Ground pads must be connected to ground for RF grounding and thermal paths. Module GND pads should be connected to the PCB ground plane through vias under the module to keep connection length as short as possible. |
Package dimensions
| Pin ID | Position X | Position Y | Dim_X | Dim_y |
|---|---|---|---|---|
| 1 | -2.65 | 1.90 | 0.400 | 0.400 |
| 2 | -2.65 | 1.32 | 0.400 | 0.220 |
| 3 | -2.65 | 0.88 | 0.400 | 0.220 |
| 4 | -2.65 | 0.44 | 0.400 | 0.220 |
| 5 | -2.65 | 0.00 | 0.400 | 0.220 |
| 6 | -2.65 | -0.44 | 0.400 | 0.220 |
| 7 | -2.65 | -0.88 | 0.400 | 0.220 |
| 8 | -2.65 | -1.32 | 0.400 | 0.220 |
| 9 | -2.65 | -1.90 | 0.400 | 0.400 |
| 10 | -1.98 | -1.90 | 0.220 | 0.400 |
| 11 | -1.54 | -1.90 | 0.220 | 0.400 |
| 12 | -1.10 | -1.90 | 0.220 | 0.400 |
| 13 | -0.66 | -1.90 | 0.220 | 0.400 |
| 14 | -0.22 | -1.90 | 0.220 | 0.400 |
| 15 | 0.22 | -1.90 | 0.220 | 0.400 |
| 16 | 0.66 | -1.90 | 0.220 | 0.400 |
| 17 | 1.10 | -1.90 | 0.220 | 0.400 |
| 18 | 1.54 | -1.90 | 0.220 | 0.400 |
| 19 | 1.98 | -1.90 | 0.220 | 0.400 |
| Pin ID | Position X | Position Y | Dim_X | Dim_y |
|---|---|---|---|---|
| 20 | 2.65 | -1.90 | 0.400 | 0.400 |
| 21 | 2.65 | -1.32 | 0.400 | 0.220 |
| 22 | 2.65 | -0.88 | 0.400 | 0.220 |
| 23 | 2.65 | -0.44 | 0.400 | 0.220 |
| 24 | 2.65 | 0.00 | 0.400 | 0.220 |
| 25 | 2.65 | 0.44 | 0.400 | 0.220 |
| 26 | 2.65 | 0.88 | 0.400 | 0.220 |
| 27 | 2.65 | 1.32 | 0.400 | 0.220 |
| 28 | 2.65 | 1.90 | 0.400 | 0.400 |
| 29 | 1.98 | 1.90 | 0.220 | 0.400 |
| 30 | 1.54 | 1.90 | 0.220 | 0.400 |
| 31 | 1.10 | 1.90 | 0.220 | 0.400 |
| 32 | 0.660 | 1.900 | 0.220 | 0.400 |
| 33 | 0.220 | 1.900 | 0.220 | 0.400 |
| 34 | -0.220 | 1.900 | 0.220 | 0.400 |
| 35 | -0.660 | 1.900 | 0.220 | 0.400 |
| 36 | -1.100 | 1.900 | 0.220 | 0.400 |
| 37 | -1.540 | 1.900 | 0.220 | 0.400 |
| 38 | -1.980 | 1.900 | 0.220 | 0.400 |
Product handling and soldering
Handling precautions and ESD ratings
| Parameter | Rating | Standard |
|---|---|---|
| ESD – Human Body Model | Class 1C (1kV) | ESDA/JEDEC JS-001-2023 |
| ESD – Charged Device Model | Class C2a (500V) | ESDA/JEDEC JS-002-2022 |
| MSL–Moisture Sensitivity Level | MSL3 | IPC/JEDEC J-STD-020 |
Solderability
Compatible with lead-free (260°C max. reflow temperature) soldering process.
RoHS compliance
This part is compliant with the 2011/65/EU RoHS directive.
Glossary
| Acronym | Description |
|---|---|
| 3GPP | Standards Body – 3rd Generation Partnership Project |
| 5G NR | 5th Generation New Radio |
| 5G RedCap | 3GPP 5G Reduced Capability |
| ACLR | Adjacent Channel Leakage Ratio |
| APT | Average Power Tracking |
| ChBW | Channel Bandwidth |
| CW | Continuous Wave |
| ESD | Electrostatic Discharge |
| ET | Envelope Tracking |
| EUTRA | Evolved UTRA (3GPP 4G) |
| EVM | Error Vector Magnitude |
| FEM | Front-End Module |
| HPM | High Power Mode |
| IMD3 | 3rd Order Intermodulation Distortion |
| LGA | Land Grid Array |
| LNA | Low Noise Amplifier |
| LPM | Low Power Mode |
| LTE | Long Term Evolution (3GPP 4G) |
| MIPI | Mobile Industry Processor Interface |
| MSL | Moisture Sensitivity Level |
| PCB | Printed Circuit Board |
| PMIC | Power Management Integrated Circuit |
| QPSK | Quadrature Phase Shift Keying Modulation |
| RF | Radio Frequency |
| RFFE | Radio Frequency Front End |
| RoHS | Restriction of Hazardous Substances directive |
| RB | Resource Block |
| Rx | Receive |
| Tamb | Ambient Temperature |
| Tx | Transmit |
| UTRA | Universal Terrestrial Radio Access (3GPP 3G) |
| VSWR | Voltage Standing Wave Ratio |